卓上型石英管炉ATV Techologie GmbH
PEO 601
卓上型石英管炉
ATV Techologie GmbH
PEO 601
EXW 固定価格 消費税別
€6,500
製造年
2007
状態
中古
所在地
Dresden 

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機械に関するデータ
オファーの詳細
- 広告ID:
- A19629521
- リファレンス番号:
- LW42193
- 更新:
- 最終更新日:23.07.2025
説明
ATV Technologie GmbH Tabletop Quartz Tube Furnace, PEO 601
Model: PEO601
Condition: Used
Technical Data:
230/400V AC
50Hz
16A
6.3kW
20-1000°C
Codpow Dbrvjfx Ah Asrh
General Information:
Year of manufacture: 2007
Serial number: 172
Operating hours: 6,383
Compact tabletop unit for Plasma Electrolytic Oxidation (PEO) or Micro Arc Oxidation (MAO)
Equipment for firing or annealing electronic components
Designed for surface treatment processes of aluminum, magnesium, and titanium
Produces ceramic coatings on metal surfaces that are particularly hard, corrosion-resistant, and temperature-resistant
Programmable firing furnace with precise temperature control
Maximum temperature range: up to approx. 1,000°C
Heating rate: approx. 100°C/min
Processing chamber: diameter approx. 112 mm (4½″), suitable for wafers up to 100 mm
Application in semiconductor, micro, and nanosystem technology
Ideal for research, development, and small series production
Microprocessor-based control with adjustable parameters (e.g., voltage, current, time)
Integrated control panel with digital displays
RS-232 interface for process data monitoring and control
Optional connection for process gases (e.g., N₂, H₂)
Accessories:
Scope of delivery as shown in the photos
この広告は自動翻訳されています。翻訳ミスがある可能性があります。
Model: PEO601
Condition: Used
Technical Data:
230/400V AC
50Hz
16A
6.3kW
20-1000°C
Codpow Dbrvjfx Ah Asrh
General Information:
Year of manufacture: 2007
Serial number: 172
Operating hours: 6,383
Compact tabletop unit for Plasma Electrolytic Oxidation (PEO) or Micro Arc Oxidation (MAO)
Equipment for firing or annealing electronic components
Designed for surface treatment processes of aluminum, magnesium, and titanium
Produces ceramic coatings on metal surfaces that are particularly hard, corrosion-resistant, and temperature-resistant
Programmable firing furnace with precise temperature control
Maximum temperature range: up to approx. 1,000°C
Heating rate: approx. 100°C/min
Processing chamber: diameter approx. 112 mm (4½″), suitable for wafers up to 100 mm
Application in semiconductor, micro, and nanosystem technology
Ideal for research, development, and small series production
Microprocessor-based control with adjustable parameters (e.g., voltage, current, time)
Integrated control panel with digital displays
RS-232 interface for process data monitoring and control
Optional connection for process gases (e.g., N₂, H₂)
Accessories:
Scope of delivery as shown in the photos
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